• DocumentCode
    2820291
  • Title

    Development of 90Nm InGaAs HEMTs and Benchmarking Logic Performance with Si CMOS

  • Author

    Cheng, Kuang-Yu (Donald) ; Chan, Doris ; Tan, Fei ; Xu, Huiming ; Feng, Milton ; Ko, Chih-Hsin ; Wann, Clement

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of Illinois at Urbana-Champaign, Urbana, IL, USA
  • fYear
    2010
  • fDate
    3-6 Oct. 2010
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    We have developed 90nm In0.7Ga0.3As channel HEMTs, directly measured of DC and RF characteristics, and performed microwave modeling for both 90nm Si CMOS and HEMT for benchmarking logic performance for future design layout and process improvement.
  • Keywords
    CMOS integrated circuits; III-V semiconductors; benchmark testing; high electron mobility transistors; indium compounds; silicon; CMOS; HEMT; In0.7Ga0.3As; Si; benchmarking logic performance; microwave modeling; size 90 nm; CMOS integrated circuits; HEMTs; Indium gallium arsenide; Logic gates; MODFETs; MOSFET circuits; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Compound Semiconductor Integrated Circuit Symposium (CSICS), 2010 IEEE
  • Conference_Location
    Monterey, CA
  • ISSN
    1550-8781
  • Print_ISBN
    978-1-4244-7437-0
  • Electronic_ISBN
    1550-8781
  • Type

    conf

  • DOI
    10.1109/CSICS.2010.5619674
  • Filename
    5619674
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2820291