A Scalable and Distributed Electro-Thermal Model of AlGaN/GaN HEMT Dedicated to Multi-Fingers Transistors

Author

Xiong, A. ; Charbonniaud, C. ; Gatard, E. ; Dellier, S.

Author_Institution

AMCAD Eng., Limoges, France

fYear

2010

fDate

3-6 Oct. 2010

Firstpage

1

Lastpage

4

Abstract

This paper deals with a scalable and distributed electro-thermal model of AlGaN/GaN HEMT. This model has been especially developed for multi-fingers and large periphery transistors. Quasi isothermal measurements by means of pulsed I(V) and pulsed [S] have been performed at different temperatures to extract the model and its thermal dependencies. Then load-pull measurements have been performed to final validations. In terms of accuracy, the developed model has been compared to an usual compact model. Three devices with different sizes have been verified to check the validity of the scaling rules implemented.

Keywords

high electron mobility transistors; semiconductor device models; AlGaN-GaN; AlGaN/GaN HEMT; distributed electrothermal model; large periphery transistors; load-pull measurements; multifingers transistors; scalable electrothermal model; Gallium nitride; HEMTs; Integrated circuit modeling; Load modeling; Logic gates; Pulse measurements; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Integrated Circuit Symposium (CSICS), 2010 IEEE

Conference_Location

Monterey, CA

ISSN

1550-8781

Print_ISBN

978-1-4244-7437-0

Electronic_ISBN

1550-8781

Type

conf

DOI

10.1109/CSICS.2010.5619692

Filename

5619692