Pressure dependence of photoluminescence in GaAs/ordered GaInP interface

Author

Kobayashi, T. ; Ohmae, T. ; Uchida, K. ; Nakahara, J.

Author_Institution

Dept. of Electr. & Electron. Eng., Kobe Univ., Japan

fYear

1998

fDate

11-15 May 1998

Firstpage

389

Lastpage

392

Abstract

We have measured the photoluminescence (PL) spectra of GaAs/GaInP single quantum wells at pressures up to ~5 GPa to investigate the characteristics of the 1.46 eV deep emission band. It has a very long decay time (at least 200-300 ns). In addition, its spectral position is found to be very sensitive to the excitation intensity. With increasing pressure, the PL peak shifts towards higher energies at a rate slightly smaller than that of the 1.52 eV band from the GaAs well. The PL behavior observed at high pressures is rather similar to those observed for the PL peak energy of partially ordered GaInP alloys. This would imply that the presence of ordered GaInP layers plays an important role in the radiative recombination at 1.46 eV. We attribute the 1.46 eV deep emission to the interface transitions of electrons and holes localized at the heterointerface

Keywords

III-V semiconductors; deep levels; gallium arsenide; gallium compounds; high-pressure effects; indium compounds; interface states; photoluminescence; piezo-optical effects; radiative lifetimes; semiconductor quantum wells; spectral line shift; 1.46 eV; 200 to 300 ns; 5 GPa; GaAs-GaInP; GaAs/GaInP single quantum wells; GaAs/ordered GaInP interface; PL peak shift; PL spectra; decay time; deep emission band; electrons; excitation intensity; holes; interface transitions; localized heterointerface states; ordered GaInP layers; photoluminescence; pressure dependence; radiative recombination; spectral position; Charge carrier processes; Electric variables measurement; Epitaxial growth; Epitaxial layers; Gain measurement; Gallium arsenide; Laser excitation; Photoluminescence; Physics; Radiative recombination;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1998 International Conference on

Conference_Location

Tsukuba

ISSN

1092-8669

Print_ISBN

0-7803-4220-8

Type

conf

DOI

10.1109/ICIPRM.1998.712484

Filename

712484