• DocumentCode
    2822422
  • Title

    Proton SEU rate predictions

  • Author

    McNulty, P.J. ; Savage, M.W. ; Roth, D.R. ; Foster, C.C.

  • Author_Institution
    Clemson Univ., SC, USA
  • fYear
    1997
  • fDate
    15-19 Sep 1997
  • Firstpage
    570
  • Lastpage
    575
  • Abstract
    Charge collection measurements show that proton-induced elastic interactions can dominate the production of SEUs in certain COTS parts when the value of the critical charge is sufficiently low. In the bulk device used in these measurements, the elastic recoils do not introduce any angular dependence nor are they energetic enough to upset the device. The spallation reactions should not introduce an angular dependence either because of the shape of the sensitive volume. However, an increase in charge-collection events is observed at very large angles of incidence, beginning at 78°. This increase appears to be caused by secondary particles generated in the side walls of the chip´s packaging, and this contribution would be significant for SEU production in devices with low values of the critical charge but not for those with large values
  • Keywords
    proton effects; COTS; charge collection; chip packaging; elastic scattering; proton SEU rate; secondary particles; spallation reaction; Charge measurement; Current measurement; Cyclotrons; Discrete event simulation; Energy measurement; Laboratories; Production; Protons; Silicon; Single event upset;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation and Its Effects on Components and Systems, 1997. RADECS 97. Fourth European Conference on
  • Conference_Location
    Cannes
  • Print_ISBN
    0-7803-4071-X
  • Type

    conf

  • DOI
    10.1109/RADECS.1997.699006
  • Filename
    699006