DocumentCode
2822422
Title
Proton SEU rate predictions
Author
McNulty, P.J. ; Savage, M.W. ; Roth, D.R. ; Foster, C.C.
Author_Institution
Clemson Univ., SC, USA
fYear
1997
fDate
15-19 Sep 1997
Firstpage
570
Lastpage
575
Abstract
Charge collection measurements show that proton-induced elastic interactions can dominate the production of SEUs in certain COTS parts when the value of the critical charge is sufficiently low. In the bulk device used in these measurements, the elastic recoils do not introduce any angular dependence nor are they energetic enough to upset the device. The spallation reactions should not introduce an angular dependence either because of the shape of the sensitive volume. However, an increase in charge-collection events is observed at very large angles of incidence, beginning at 78°. This increase appears to be caused by secondary particles generated in the side walls of the chip´s packaging, and this contribution would be significant for SEU production in devices with low values of the critical charge but not for those with large values
Keywords
proton effects; COTS; charge collection; chip packaging; elastic scattering; proton SEU rate; secondary particles; spallation reaction; Charge measurement; Current measurement; Cyclotrons; Discrete event simulation; Energy measurement; Laboratories; Production; Protons; Silicon; Single event upset;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation and Its Effects on Components and Systems, 1997. RADECS 97. Fourth European Conference on
Conference_Location
Cannes
Print_ISBN
0-7803-4071-X
Type
conf
DOI
10.1109/RADECS.1997.699006
Filename
699006
Link To Document