Evaluation of principal characteristics of circular resonator in thin film applications

A new type of resonator structure has been developed in thin film SOI applications. The resonator has circular shape and vertical vibration. By using conventional SOI chips with other electronics it possible to add this resonator in same structure without complex process steps. The resonator is low mass resonator. It can be used in low frequencies (MHz) and high frequencies (GHz). The resonator has two electrostatically driven electrodes, one directly in resonator and another in substrate. Coupling rods are not needed. Also it is possible to build some kind of transistor on the resonator. By using this component, the transistor can be driven electrostatically. It can have higher voltage-current amplification -ratio than conventional transistor because of mechanic impact. Both strucrures will at least have Q-value of 700, which has been measured in 3,3 MHz in normal room conditions.