A concurrent dual-band mixer for 900-MHz/1.8GHz RF front-ends

Author

Abdelrheem, Tamer A. ; Elhak, Hany Y. ; Sharaf, Khaled M.

Author_Institution

MEMSCAP, Cairo, Egypt

Volume

3

fYear

2003

fDate

27-30 Dec. 2003

Firstpage

1291

Abstract

A concurrent dual-band mixer is introduced that is capable of simultaneous operation in the 900MHz and 1800MHz frequency bands. A general description of the mixer implementation is provided with analysis of the dual-band matching network that achieves simultaneous narrow band matching in the two frequency bands of interest. The mixer is implemented in a 0.8 μm SiGe BICMOS technology with f_T of 35 GHz. The mixer consumes 7.4 mA of current and achieves power conversion gain of 10.5 dB and 10.1 dB, input return losses of 15 dB and 10 dB, noise figure of 12.6 dB and 13 dB, and IIP3 of 2.6 dBm and 0.8 dBm in the two bands, respectively.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; integrated circuit design; millimetre wave mixers; multifrequency antennas; radio receivers; radiofrequency integrated circuits; radiotelephony; 0.8 micron; 1.8 GHz; 10 dB; 10.1 dB; 10.5 dB; 12.6 dB; 13 dB; 15 dB; 35 GHz; 7.4 mA; 900 MHz; SiGe; SiGe BICMOS technology; concurrent dual-band mixer; dual-band matching network; input return loss; power conversion gain; radiofrequency front end; BiCMOS integrated circuits; Dual band; Gain; Germanium silicon alloys; Mixers; Narrowband; Noise figure; Power conversion; Radio frequency; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2003 IEEE 46th Midwest Symposium on

ISSN

1548-3746

Print_ISBN

0-7803-8294-3

Type

conf

DOI

10.1109/MWSCAS.2003.1562531

Filename

1562531