Mobility and scattering mechanisms in buried InGaSb quantum well channels integrated with in-situ MBE grown gate oxide

Author

Madisetti, S. ; Nagaiah, P. ; Chidambaram, T. ; Tokranov, V. ; Yakimov, M. ; Oktyabrsky, S.

Author_Institution

Coll. of Nanoscale Sci. & Eng., Univ. at Albany- SUNY, Albany, NY, USA

fYear

2012

fDate

18-20 June 2012

Firstpage

103

Lastpage

104

Abstract

InGaSb material family with its higher hole transport properties are potential candidates for group III-V CMOS circuits. Understanding of the dominant scattering mechanisms is crucial for the development of future high speed, low power device applications. We present Hall mobility data of p-type InGaSb quantum well (QW) channels and derive the dominant scattering mechanisms related to the interface and trapped charges that degrade mobility in these structures.

Keywords

CMOS integrated circuits; Hall mobility; III-V semiconductors; gallium compounds; indium compounds; low-power electronics; semiconductor quantum wells; Hall mobility data; InGaSb; buried QW; dominant scattering mechanisms; group III-V CMOS circuits; hole transport properties; low power device applications; p-type quantum well channels; trapped charges; CMOS integrated circuits; Capacitance-voltage characteristics; Hall effect; Indium gallium arsenide; Semiconductor device measurement; Thickness measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference (DRC), 2012 70th Annual

Conference_Location

University Park, TX

ISSN

1548-3770

Print_ISBN

978-1-4673-1163-2

Type

conf

DOI

10.1109/DRC.2012.6256973

Filename

6256973