• DocumentCode
    2828692
  • Title

    Epitaxial Si punch-through based selector for bipolar RRAM

  • Author

    Bafna, P. ; Karkare, P. ; Srinivasan, S ; Chopra, S. ; Lashkare, S. ; Kim, Y. ; Srinivasan, S. ; Kuppurao, S. ; Lodha, S. ; Ganguly, U.

  • Author_Institution
    Department of Electrical Engineering, Indian Institute of Technology, Bombay, Mumbai 400076, India
  • fYear
    2012
  • fDate
    18-20 June 2012
  • Firstpage
    115
  • Lastpage
    116
  • Abstract
    Resistive RAM is a very promising candidate for high density non-volatile memory. Although bipolar operation has been shown to work at lower current (essential for low power, mobile computing) [1], a suitable selector device that delivers high current density and high on/off current ratio is challenging [2–4]. We demonstrate a 4F2 bipolar selector device based on the punch-through mechanism. An npn vertical junction device fabricated using in-situ doped epitaxial silicon is presented. Superior on-current density (Jon=1MA/cm2) and high on-off current ratio (Ion/Ioff) of 300–5000 is experimentally demonstrated. TCAD simulations based performance, variability and scalability are presented.
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference (DRC), 2012 70th Annual
  • Conference_Location
    University Park, PA, USA
  • ISSN
    1548-3770
  • Print_ISBN
    978-1-4673-1163-2
  • Type

    conf

  • DOI
    10.1109/DRC.2012.6256979
  • Filename
    6256979
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2828692