Pulsed nanosecond characterization of graphene transistors

We investigate the effect of pulsed current-voltage (I-V) measurements on the hysteresis and mobility of top-gated graphene field-effect transistors (GFETs). The hysteresis shift (ΔV₀) is the difference in Dirac voltage (V₀) between the forward and reverse gate voltage sweeps, primarily caused by charge trapping at the graphene-dielectric interface. Here, we find that hysteresis can be entirely eliminated by using nanosecond pulsed testing, leading to “clean” electrical characteristics and reliable mobility extraction. In addition, we uncover several time constants in the transient trap-related response of a device.