DocumentCode
2829818
Title
Methods for attaining high interband tunneling current in III-Nitrides
Author
Growden, Tyler A. ; Krishnamoorthy, Sriram ; Nath, Digbijoy N. ; Ramesh, Anisha ; Rajan, Siddharth ; Berger, Paul R.
Author_Institution
Dept. of Electr. & Comput. Eng., Ohio State Univ., Columbus, OH, USA
fYear
2012
fDate
18-20 June 2012
Firstpage
163
Lastpage
164
Abstract
In conclusion, the authors have reported an increase in forward interband tunneling current density from 17.7 A/cm2 [2] to 39.8 kA/cm2 by applying outside AIGaN confmement barriers and 6-doping to a common structure. Some of the devices still exhibit hysteresis effects caused by traps, but some seem to display less of an effect, which needs to be studied further to provide stability. Optimization of the barrier thickness and Indium composition must also be performed to continue to push the peak current density up in value
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; indium; tunnel diodes; tunnelling; wide band gap semiconductors; AlGaN; confmement barriers; forward interband tunneling current density; high interband tunneling current; hysteresis effects; traps;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference (DRC), 2012 70th Annual
Conference_Location
University Park, TX
ISSN
1548-3770
Print_ISBN
978-1-4673-1163-2
Type
conf
DOI
10.1109/DRC.2012.6257036
Filename
6257036
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