• DocumentCode
    2829890
  • Title

    Experimental demonstration of a wafer-bonded heterostructure based unipolar transistor with In0.53Ga0.47as channel and III-N drain

  • Author

    Lal, Sunil ; Jing Lu ; Thibeault, Brian ; DenBaars, Steven P. ; Mishra, Umesh K.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of California, Santa Barbara, CA, USA
  • fYear
    2012
  • fDate
    18-20 June 2012
  • Firstpage
    165
  • Lastpage
    166
  • Abstract
    This paper report the first demonstration of a fully functional wafer-bonded current aperture vertical electron transistor (BAVET). A maximum drain current (Id) of 29 mA and transconductance (gm_d) of 7.4 mS at a Vgs = 0 V is measured for a device with a width of (75x2) f.lm and an aperture length (Lap) of 8 μm.
  • Keywords
    III-V semiconductors; gallium arsenide; high electron mobility transistors; indium compounds; wafer bonding; wide band gap semiconductors; BAVET; InGaAs; aperture length; current 29 mA; drain current; size 8 mum; wafer bonded current aperture vertical electron transistor; wafer bonded heterostructure based unipolar transistor; Apertures; RNA;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference (DRC), 2012 70th Annual
  • Conference_Location
    University Park, TX
  • ISSN
    1548-3770
  • Print_ISBN
    978-1-4673-1163-2
  • Type

    conf

  • DOI
    10.1109/DRC.2012.6257041
  • Filename
    6257041
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2829890