Gaas MMIC SPDT Switcher with On-Chip Drivers

Author

Barov, A.

Author_Institution

Micran Co., Tomsk

Volume

1

fYear

2006

fDate

Sept. 2006

Firstpage

189

Lastpage

190

Abstract

A circuit design of engineering of with GaAs MMIC SPDT switch with integrated driver based on metal-semiconductor field-effect transistors (MESFETs) is presented. The distinctive feature of the presented circuit design of the driver is operated with a single power supply, so due to this consumption current (thermal scattering power) is reduced and operate reliability is increased the circuit analysis and test data approve viability of accepted solutions

Keywords

III-V semiconductors; driver circuits; field effect MMIC; field effect transistor switches; gallium arsenide; integrated circuit design; microwave switches; network analysis; telecommunication power supplies; GaAs; MESFET; MMIC SPDT switch; circuit analysis; circuit design engineering; metal-semiconductor field-effect transistor; monolithic microwave integrated circuit; on-chip driver; power supply; reliability; Circuit synthesis; Circuit testing; Design engineering; Driver circuits; Field effect MMICs; Gallium arsenide; Power engineering and energy; Reliability engineering; Switches; Switching circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Telecommunication Technology, 2006. CriMiCO '06. 16th International Crimean Conference

Conference_Location

Sevastopol, Crimea

Print_ISBN

966-7968-92-8

Electronic_ISBN

966-7968-92-8

Type

conf

DOI

10.1109/CRMICO.2006.256355

Filename

4023660