• DocumentCode
    2830734
  • Title

    GaAs MMIC PIN Diodes SPDT Switcher

  • Author

    Barov, A. ; Gushchin, S.

  • Author_Institution
    Micran Co., Tomsk
  • Volume
    1
  • fYear
    2006
  • fDate
    Sept. 2006
  • Firstpage
    191
  • Lastpage
    192
  • Abstract
    This paper presents the description of GaAs MMIC PIN diodes switch design. The process included experimental part of pin diodes parameters determination. Epitaxial wafers substance was produced using VPE
  • Keywords
    III-V semiconductors; MMIC; gallium arsenide; microwave switches; p-i-n diodes; parameter estimation; vapour phase epitaxial growth; GaAs; MMIC PIN diodes; SPDT; VPE; epitaxial wafers substance; monolithic microwave integrated circuit; parameters determination; single pole double throw switch; Circuit topology; Gallium arsenide; MMICs; Microwave integrated circuits; PIN photodiodes; Switches; Switching circuits;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Telecommunication Technology, 2006. CriMiCO '06. 16th International Crimean Conference
  • Conference_Location
    Sevastopol, Crimea
  • Print_ISBN
    966-7968-92-8
  • Electronic_ISBN
    966-7968-92-8
  • Type

    conf

  • DOI
    10.1109/CRMICO.2006.256356
  • Filename
    4023661
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2830734