DocumentCode
2830951
Title
Explanation of Unusual Dependence of Gate-Drain Breakdown Voltage on Gate Potential in Submicron Mesfets
Author
Buvaylik, E. ; Martynov, Y. ; Pogorelova, E.
Author_Institution
FSUE RPC "Istok", Fryazino
Volume
1
fYear
2006
fDate
Sept. 2006
Firstpage
224
Lastpage
225
Abstract
Gate-drain breakdown voltage measurements for submicron MESFETs and HFETs reveal the dependence of this voltage on gate potential. This fact conflicts with the simple theory and with the same measurements carried out for silicon MESFETs. We attempt to overcome this conflict using MESFET, HFET numerical simulation
Keywords
Schottky gate field effect transistors; electric potential; high electron mobility transistors; gate potential; gate-drain breakdown voltage measurement; high electron mobility transistor; metal semiconductor field effect transistor; numerical simulation; submicron HFET; submicron MESFET; Computer aided analysis; Gallium arsenide; MESFETs; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Telecommunication Technology, 2006. CriMiCO '06. 16th International Crimean Conference
Conference_Location
Sevastopol, Crimea
Print_ISBN
966-7968-92-8
Electronic_ISBN
966-7968-92-8
Type
conf
DOI
10.1109/CRMICO.2006.256371
Filename
4023676
Link To Document