DocumentCode
2832026
Title
Preparation and characterization of n-type Bi2Te3 thermoelectric nanowire array
Author
Wang, Wei ; Huang, Qinghua ; Jia, Falong ; Zhang, Jiaozhong
Author_Institution
Dept. of Appl. Chem., Tianjin Univ., China
fYear
2003
fDate
17-21 Aug. 2003
Firstpage
407
Lastpage
409
Abstract
The figure of merit can be improved greatly through reducing the size of thermoelectric materials into low dimension, and the studies on low dimensional thermoelectric materials have brought widely attention in the world. In our lab, n-type Bi2Te3 thermoelectric materials with nanowire array structure have been prepared by liquid electrodeposition in the solutions containing Bi+3 and HTeO2+ with alumina porous film as template. The electrochemical measurements show that the co-deposition of elements bismuth and tellurium can take place and the electrodeposition potential of Bi+3 is more positive than that of HTeO2+. ESEM and TEM analyses show that the diameter and length of Bi2Te3 nanowires are about 50nm and 50 μm separately. The Seebeck coefficient α of the Bi2Fe3 nanowire array is about - 188 μ V/K at 307K.
Keywords
Seebeck effect; bismuth compounds; electrodeposition; nanowires; scanning electron microscopy; semiconductor materials; thermoelectricity; transmission electron microscopy; 307 K; 50 micron; 50 nm; Bi2Te3; ESEM; Seebeck coefficient; TEM; electrochemical measurements; figure of merit; liquid electrodeposition; n-type Bi2Te3 thermoelectric nanowire array; Assembly; Biological materials; Bismuth; Composite materials; Electrodes; Nanostructured materials; Semiconductor device doping; Tellurium; Thermal conductivity; Thermoelectricity;
fLanguage
English
Publisher
ieee
Conference_Titel
Thermoelectrics, 2003 Twenty-Second International Conference on - ICT
Print_ISBN
0-7803-8301-X
Type
conf
DOI
10.1109/ICT.2003.1287534
Filename
1287534
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