• DocumentCode
    2832630
  • Title

    Update of single event failure in power MOSFETs

  • Author

    Nichols, Donald K. ; Coss, James R. ; Miyahira, Tetsuo ; Titus, Jeffrey ; Oberg, Dennis ; Wert, Jerry ; Majewski, Peter ; Lintz, John

  • Author_Institution
    Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
  • fYear
    1996
  • fDate
    35265
  • Firstpage
    67
  • Lastpage
    72
  • Abstract
    This paper presents an update of the first 1994 compendium of single event test data for power MOSFETs. It provides failure thresholds from burnout or gate rupture for 61 devices of six manufacturers
  • Keywords
    electric breakdown; failure analysis; power MOSFET; radiation effects; semiconductor device reliability; semiconductor device testing; burnout; failure thresholds; gate rupture; power MOSFETs; single event failure; single event test data; Aerospace testing; Cranes; Laboratories; MOSFETs; Manufacturing; Propulsion; Space technology; System testing; Temperature; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation Effects Data Workshop, 1996., IEEE
  • Conference_Location
    Indian Wells, CA
  • Print_ISBN
    0-7803-3398-5
  • Type

    conf

  • DOI
    10.1109/REDW.1996.574191
  • Filename
    574191
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2832630