A 0.5 to 3 GHz monolithic microwave amplifier

Author

Pote, A.

Author_Institution

British Telecom Res. Lab., Ipswich, UK

fYear

1988

fDate

32272

Firstpage

42370

Lastpage

42372

Abstract

A monolithic gallium arsenide amplifier is required for use in the IF stage of a millimetre-wave downconverter. These downconverters will be used in a demonstration of TV distribution at 29 GHz. GaAs MMICs are important in providing the low cost technology demanded by this type of application. The specifications for the IF stage of this downconverter are a frequency range of 0.95 to 1.75 GHz; gain of >40 dB; noise figure of <3 dB; and VSWR of <2:1. In order to meet the gain requirement, two amplifiers will be used in series. It was decided to use a commercial foundry to fabricate the design because of the availability of accurate circuit models. These are derived from the statistical analysis of measurement data on standard components such as FETs, spiral inductors and MIM capacitors. This factor should result in a relatively short design period and a high probability of the first design iteration working. In addition the use of a well established process should result in a high yield. The foundry chosen was Tri-Quint Semiconductor, Beaverton, Oregon, USA

Keywords

III-V semiconductors; frequency convertors; gallium arsenide; microwave amplifiers; microwave integrated circuits; monolithic integrated circuits; television equipment; 0.5 to 3.0 GHz; 29 GHz; 3 dB; 40 dB; Beaverton; FETs; GaAs; IF stage; III-V semiconductors; MIM capacitors; MM wave downconverter; MMICs; Oregon; TV distribution; Tri-Quint Semiconductor; USA; circuit models; foundry; measurement data; monolithic microwave amplifier; spiral inductors; statistical analysis;

fLanguage

English

Publisher

iet

Conference_Titel

Microwave Components in Telecommunications, IEE Colloquium on

Conference_Location

London

Type

conf

Filename

209208