Advanced quantum dot based devices

Author

Reithmaier, Johann Peter ; Pavelescu, Emil-Mihai ; Gilfert, Christian

Author_Institution

Inst. of Nanostruct. Technol. & Analytics, Univ. of Kassel, Kassel, Germany

fYear

2009

fDate

14-19 June 2009

Firstpage

1

Lastpage

1

Abstract

In semiconductor quantum dot structures major macroscopic electronic and optical material properties can be engineered by geometric parameters on the nanoscale domain. In this paper an overview will be given on advanced layer designs for high power quantum dot lasers. Advanced designs based on tunnel injection quantum wells allow a significant improvement of the characteristic temperature (To=200 K). In addition a strong reduction of the alpha-factor is expected, which may allow in future to overcome filamentation problems in high brightness high power lasers.

Keywords

nanophotonics; optical design techniques; optical materials; quantum dot lasers; quantum wells; geometric parameter; high power quantum dot laser; nanoscale domain; optical material property; semiconductor quantum dot structure; tunnel injection quantum well; Brightness; Optical design; Optical materials; Power engineering and energy; Power lasers; Quantum dot lasers; Quantum dots; Quantum well lasers; Semiconductor lasers; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics 2009 and the European Quantum Electronics Conference. CLEO Europe - EQEC 2009. European Conference on

Conference_Location

Munich

Print_ISBN

978-1-4244-4079-5

Electronic_ISBN

978-1-4244-4080-1

Type

conf

DOI

10.1109/CLEOE-EQEC.2009.5194651

Filename

5194651