• DocumentCode
    2835684
  • Title

    Requirements for the Inclusion of Switching Losses in IGBT Power Cycling Studies

  • Author

    Beutel, A.A. ; Van Coller, J.M.

  • Author_Institution
    Witwatersrand Univ., Johannesburg
  • fYear
    2006
  • fDate
    15-17 Dec. 2006
  • Firstpage
    1855
  • Lastpage
    1860
  • Abstract
    The requirements that an alternating current (AC) power cycling test circuit for insulated gate bipolar transistors (IGBTs) and their free-wheeling diodes must meet are derived. First, a literature review revealed that the parameter that most affects device power cycling performance is the variation in its junction-case temperature rise (DeltaTjc). Next, a list of criteria that an AC test circuit must meet was made, based on the literature. Finally, the behaviour of a conventional single phase inverter (H-bridge) using simple PWM control was quantified by simulation for different switching frequencies and power factors. It is shown that this circuit is suitable for AC power cycling, with the disadvantage of high energy losses in the load.
  • Keywords
    PWM invertors; insulated gate bipolar transistors; losses; power bipolar transistors; power semiconductor switches; semiconductor device testing; H-bridge inverter; IGBT power cycling; PWM control; alternating current power cycling test circuit; free-wheeling diodes; insulated gate bipolar transistors; junction-case temperature rise; single phase inverter; switching losses; Circuit simulation; Circuit testing; Diodes; Energy loss; Insulated gate bipolar transistors; Pulse width modulation inverters; Reactive power; Switching frequency; Switching loss; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Industrial Technology, 2006. ICIT 2006. IEEE International Conference on
  • Conference_Location
    Mumbai
  • Print_ISBN
    1-4244-0726-5
  • Electronic_ISBN
    1-4244-0726-5
  • Type

    conf

  • DOI
    10.1109/ICIT.2006.372456
  • Filename
    4237778