DocumentCode
283629
Title
Design and fabrication of a planar, resonant Franz-Keldysh optical modulator
Author
Leeson, M.S. ; Payne, F.P. ; Mears, R.J. ; Carroll, J.E. ; Roberts, J.S. ; Pate, M.A. ; Hill, G.
Author_Institution
Dept. of Eng., Cambridge Univ., UK
fYear
1988
fDate
32464
Firstpage
42583
Lastpage
42586
Abstract
The authors describe the design, fabrication and performance of a planar, resonant Franz-Keldysh modulator which has produced a 38% transmission change for 20 V applied bias. The device consists of a reverse biased GaAs pin diode grown by MOVPE and from which the substrate has been removed
Keywords
III-V semiconductors; gallium arsenide; optical modulation; photodiodes; vapour phase epitaxial growth; GaAs pin diode; MOVPE; modulator design; modulator fabrication; modulator performance; resonant Franz-Keldysh optical modulator; semiconductor;
fLanguage
English
Publisher
iet
Conference_Titel
Optics in Computing, IEE Colloquium on
Conference_Location
London
Type
conf
Filename
209683
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