• DocumentCode
    283629
  • Title

    Design and fabrication of a planar, resonant Franz-Keldysh optical modulator

  • Author

    Leeson, M.S. ; Payne, F.P. ; Mears, R.J. ; Carroll, J.E. ; Roberts, J.S. ; Pate, M.A. ; Hill, G.

  • Author_Institution
    Dept. of Eng., Cambridge Univ., UK
  • fYear
    1988
  • fDate
    32464
  • Firstpage
    42583
  • Lastpage
    42586
  • Abstract
    The authors describe the design, fabrication and performance of a planar, resonant Franz-Keldysh modulator which has produced a 38% transmission change for 20 V applied bias. The device consists of a reverse biased GaAs pin diode grown by MOVPE and from which the substrate has been removed
  • Keywords
    III-V semiconductors; gallium arsenide; optical modulation; photodiodes; vapour phase epitaxial growth; GaAs pin diode; MOVPE; modulator design; modulator fabrication; modulator performance; resonant Franz-Keldysh optical modulator; semiconductor;
  • fLanguage
    English
  • Publisher
    iet
  • Conference_Titel
    Optics in Computing, IEE Colloquium on
  • Conference_Location
    London
  • Type

    conf

  • Filename
    209683