DocumentCode
2839927
Title
Ultra-low-power, high-performance, dynamic-threshold digital circuits in the FlexFET independently-double-gated SOI CMOS technology
Author
Hackler, D. ; DeGregorio, K. ; Parke, S.
Author_Institution
American Semicond. Inc., Boise, ID, USA
fYear
2005
fDate
3-6 Oct. 2005
Firstpage
81
Lastpage
82
Abstract
This paper demonstrates IDG FlexFET CMOS in static CMOS ring oscillators, while the advantages of applying IDG-CMOS to dynamic domino CMOS logic circuits have recently been shown as well (H. Mahmoodi, 2004). IDG-CMOS has also recently been applied to several exciting new analog/MS/RF circuit applications, such as a single transistor mixer (L. Mathew, 2004).
Keywords
CMOS logic circuits; field effect transistors; logic design; low-power electronics; oscillators; silicon-on-insulator; CMOS logic circuits; CMOS ring oscillators; IDG FlexFET CMOS; SOI CMOS technology; dynamic-threshold digital circuits; independently-double-gated CMOS; CMOS digital integrated circuits; CMOS logic circuits; CMOS technology; Digital circuits; Etching; Inverters; MOSFETs; Radio frequency; Ring oscillators; Tin;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI Conference, 2005. Proceedings. 2005 IEEE International
ISSN
1078-621X
Print_ISBN
0-7803-9212-4
Type
conf
DOI
10.1109/SOI.2005.1563542
Filename
1563542
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