DocumentCode
2840312
Title
Development of stacking faults in strained silicon layers
Author
Bedell, S.W. ; Reznicek, A. ; Yang, B. ; Hovel, H.J. ; Ott, J.A. ; Fogel, K. ; Domenicucci, A.G. ; Sadana, D.K.
Author_Institution
IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA
fYear
2005
fDate
3-6 Oct. 2005
Firstpage
144
Lastpage
145
Abstract
Stacking fault (SF) defects have been shown to form in Si layers under tensile strain based in P. M. J. Maree et al. (1987) and S. W. Bedell et al. (2004). In this work, we investigate the development of SF defects in strained silicon layers grown on low-defect SiGe graded buffer layers. Si layers were grown to various thicknesses at different temperatures and the resulting SF densities are measured using a specialized etching technique as presented in S. W. Bedell et al. (2004).
Keywords
Ge-Si alloys; buffer layers; elemental semiconductors; epitaxial layers; silicon; stacking faults; SiGe-Si; buffer layers; defect development; specialized etching technique; stacking faults; strained silicon layers; tensile strain; Buffer layers; CMOS technology; Density measurement; Etching; Germanium silicon alloys; Silicon germanium; Silicon on insulator technology; Stacking; Substrates; Thickness measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI Conference, 2005. Proceedings. 2005 IEEE International
ISSN
1078-621X
Print_ISBN
0-7803-9212-4
Type
conf
DOI
10.1109/SOI.2005.1563568
Filename
1563568
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