DocumentCode
2841208
Title
Characteristics of a highly mismatched InxGa1-x As/AlGaAs (0⩽x⩽0.5) HEMT on a GaAs substrate
Author
Mitsunaka, T. ; Maezawa, K. ; Osaka, J. ; Kishimoto, S. ; Mizutani, T.
Author_Institution
Dept. of Quantum Eng., Nagoya Univ., Japan
fYear
1998
fDate
11-15 May 1998
Firstpage
675
Lastpage
678
Abstract
The performance of a highly mismatched InxGa1-x As/AlGaAs (0⩽x⩽0.5) HEMT fabricated on a GaAs substrate was studied in detail. The large cutoff frequency fT and the effective saturation velocity vs for the HEMTs with a large InAs-mole-fraction confirm the effectiveness of using a thick Inx/2 Ga1-x/2As buffer layer to grow a highly mismatched In xGa1-xAs/AlGaAs HEMT structure on a GaAs substrate. The were obtained at InAs-mole-fraction x of 0.4. The vs and the mobility μ showed different x dependence. This was explained by considering a different scattering mechanism which dominated the vs and the μ. A 25-30% increase in the vs was observed by decreasing the temperature from 300 to 20 K
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; 300 to 20 K; GaAs; GaAs substrate; InGaAs-AlGaAs; effective saturation velocity; highly mismatched InxGa1-xAs/AlGaAs HEMT; large InAs-mole-fraction; large cutoff frequency; scattering mechanism; thick Inx/2Ga1-x/2As buffer layer; Buffer layers; Cutoff frequency; Electrons; Epitaxial layers; Gallium arsenide; HEMTs; Indium compounds; Indium gallium arsenide; Lattices; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1998 International Conference on
Conference_Location
Tsukuba
ISSN
1092-8669
Print_ISBN
0-7803-4220-8
Type
conf
DOI
10.1109/ICIPRM.1998.712728
Filename
712728
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