A 3GHz VCO suitable for MIPI M-PHY serial interface

Author

Demartinos, A.C. ; Tsimpos, A. ; Vlassis, S. ; Sgourenas, S. ; Souliotis, G.

Author_Institution

Dept. of Phys., Univ. of Patras, Patras, Greece

fYear

2015

fDate

21-23 April 2015

Firstpage

1

Lastpage

6

Abstract

This paper proposes a VCO which is based on a pseudo-differential ring oscillator scheme and it is suitable for multi-Gbps serial interfaces. The ring oscillator topology is based on two CMOS inverters loaded by a simple negative resistance realized with pMOS transistors. The circuit performance is compliant with the MIPI Alliance M-PHY standard which is the most updated high-speed serial interface technology. The circuit is designed and simulated in a 65nm CMOS process with 1.2 V supply voltage. The frequency tuning range was 1.9 to 3.5 GHz with an almost constant K_VCO equal to 5.7 GHz/V, approximately, while the current consumption was 6.4 mA at 3 GHz operating frequency and the phase noise was -94 dBc/Hz at 1 MHz frequency offset.

Keywords

CMOS integrated circuits; MOSFET; integrated circuit design; invertors; microwave oscillators; voltage-controlled oscillators; CMOS inverters; MIPI Alliance M-PHY standard; MIPI M-PHY serial interface; VCO; current 6.4 mA; frequency 1.9 GHz to 3.5 GHz; frequency tuning; high-speed serial interface technology; pMOS transistors; pseudo-differential ring oscillator scheme; ring oscillator topology; size 65 nm; voltage 1.2 V; CMOS integrated circuits; Delays; Phase locked loops; Phase noise; Tuning; Voltage-controlled oscillators; CMOS Ring oscillators; High speed serial interfaces; PLL; VCO;

fLanguage

English

Publisher

ieee

Conference_Titel

Design & Technology of Integrated Systems in Nanoscale Era (DTIS), 2015 10th International Conference on

Conference_Location

Naples

Type

conf

DOI

10.1109/DTIS.2015.7127353

Filename

7127353