Intermodulation cancellation in HEMTs

Author

Qu, Guoli ; Parker, Anthony E.

Author_Institution

Dept. of Electron., Macquarie Univ., North Ryde, NSW, Australia

fYear

1998

fDate

1998

Firstpage

84

Lastpage

87

Abstract

This paper examines intermodulation (IM) minima generated by the nonlinear drain-source current characteristics of HEMTs. This investigation is based on a more accurate intermodulation distortion model recently proposed by Qu and Parker (see The Proc. of 14th Australian Microelectronics Conference, p. 70-5, Oct. 1997). The IM cancellation conditions in terms of the Taylor series coefficients are established and verified with measurement and simulation. Second and third-order intermodulation cancellation can be assessed by simple examination of the transconductance characteristics of the device. This permits routine selection of optional bias after characterising the devices

Keywords

high electron mobility transistors; intermodulation distortion; microwave field effect transistors; series (mathematics); HEMTs; IM minima; IMD; Taylor series coefficients; intermodulation cancellation; intermodulation distortion model; nonlinear drain-source current characteristics; optional bias; second-order IM cancellation; third-order IM cancellation; transconductance characteristics; Character generation; Distortion measurement; HEMTs; Intermodulation distortion; MODFETs; Nonlinear distortion; Performance analysis; System performance; Taylor series; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter Wave Technology Proceedings, 1998. ICMMT '98. 1998 International Conference on

Conference_Location

Beijing

Print_ISBN

0-7803-4308-5

Type

conf

DOI

10.1109/ICMMT.1998.768231

Filename

768231