DocumentCode
2842605
Title
Development of a 557 GHz GaAs monolithic membrane-diode mixer
Author
Huan Zhao ; Drakinskiy, Vladimir ; Sobis, P. ; Hanning, Johanna ; Bryllert, Tomas ; Aik-Yean Tang ; Stake, Jan
Author_Institution
GigaHertz Centre, Chalmers Univ. of Technol., Goteborg, Sweden
fYear
2012
fDate
27-30 Aug. 2012
Firstpage
102
Lastpage
105
Abstract
We present the development of a monolithically integrated 557 GHz membrane Schottky diode mixer. RF test shows state-of-the-art performance with an optimum receiver noise temperature below 1300 K DSB and an estimated mixer DSB conversion loss of 9 dB and a mixer DSB noise temperature of 1100 K including all losses.
Keywords
III-V semiconductors; Schottky diode mixers; gallium arsenide; DSB conversion loss; DSB noise temperature; GaAs; RF test shows state-of-the-art performance; frequency 557 GHz; loss 9 dB; monolithic membrane-diode mixer; monolithically integrated membrane Schottky diode mixer; receiver noise temperature; temperature 1100 K; Anodes; Gallium arsenide; Mixers; Noise; Radio frequency; Receivers; Schottky diodes; Schottky diodes; membrane circuits; receivers; submillimeter wave mixers;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials (IPRM), 2012 International Conference on
Conference_Location
Santa Barbara, CA
ISSN
1092-8669
Print_ISBN
978-1-4673-1725-2
Type
conf
DOI
10.1109/ICIPRM.2012.6403330
Filename
6403330
Link To Document