T gates and selective etching techniques applied to millimeter wave-band PHEMT process

Author

Qiang, Jia Hai ; Dong, Xing ; Bai, LiXiao ; Kui, Song Jun

Author_Institution

The 13th Inst., Minist. of EI, China

fYear

1998

fDate

1998

Firstpage

146

Lastpage

149

Abstract

We have fabricated a PHEMT with 0.1-0.3 μm T-gates by a new method. With parameter control, such as time, etc., and transverse growth on the gate length, we have obtained 0.1-0.3 μm T-gates. The fabricated device has an average transconductances across a wafer in excess of 400 mS/mm, and its Gamax reaches 5.67 dB at 40 GHz, with f_T=74 GHz and fmax=130 GHz. Here we also introduce a powerful method of selective etching using a citric acid/H₂O₂ etching system. With this system we have obtained a high selective etching ratio: the ratio for GaAs-Al_0.03Ga_0.7As is over 150

Keywords

etching; high electron mobility transistors; millimetre wave field effect transistors; semiconductor device metallisation; semiconductor technology; 0.1 to 0.3 micron; 40 to 130 GHz; 400 mS/mm; 5.67 dB; GaAs-Al_0.03Ga_0.7As; H₂O₂; MM-wave band PHEMT process; T-gates; citric acid/H₂O₂ etching system; high selective etching ratio; pseudomorphic HEMT fabrication; selective etching techniques; transconductances; Art; Conducting materials; Gallium arsenide; Gas discharge devices; HEMTs; Indium phosphide; Millimeter wave technology; PHEMTs; Silicon compounds; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter Wave Technology Proceedings, 1998. ICMMT '98. 1998 International Conference on

Conference_Location

Beijing

Print_ISBN

0-7803-4308-5

Type

conf

DOI

10.1109/ICMMT.1998.768249

Filename

768249