Epitaxy of III–V based channels on Si and transistor integration for 12-10nm node CMOS

Moore´s Law describes the scaling of Si-based CMOS technology in terms of performance, power consumption, area and cost. As we have reached the physical limits of scaling Si channels, alternative materials with higher carrier mobility such as Ge and IIIV compound semiconductors are in order. This paper reviews some of imec´s work on introducing In_0.53Ga_0.47As in a manufacturable and integratable way into mainstream Si-based CMOS technology. Several major issues are known: dielectric/IIIV interface passivation, mismatch of lattice and crystal structure between IIIV and Si, small bandgap leading to enhanced leakage,... We will discuss mainly the epitaxial growth aspects and the integration of IIIV materials in Si MOSFET devices, and point out some more unexpected materials and device issues.