Power bipolar-mode JFET (BMFET) versus BJT: a comparative analysis

Author

Persiano, Giovanni Vito ; Strollo, Antonio G M ; Spirito, Paolo

Author_Institution

Dept. of Electron., Naples Univ., Italy

fYear

1991

fDate

Sept. 28 1991-Oct. 4 1991

Firstpage

1451

Abstract

By reducing the distance of the gate diffusions in a vertical channel JFET (junction field effect transistor) device it is possible to continuously change from a BMFET to a standard BJT (bipolar junction transistor) structure. The static characteristics of this class of normally off devices are investigated using 2D numerical simulation. It is shown that a partial overlap of the gate diffusions is a simple means to obtain a normally off structure with high blocking voltage. A comparative analysis with a standard power BJT indicates that the BMFET has larger current gain, does not suffer from current crowding phenomena, and has lower saturation voltage.<>

Keywords

bipolar transistors; insulated gate field effect transistors; power transistors; semiconductor device models; 2D numerical simulation; BJT; BMFET; blocking voltage; current gain; gate diffusions; normally off structure; power transistors; saturation voltage; semiconductor device models; static characteristics; vertical channel JFET; Analytical models; Bipolar transistors; Conductivity; Doping profiles; Frequency; Impedance; Numerical simulation; Power control; Proximity effect; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Industry Applications Society Annual Meeting, 1991., Conference Record of the 1991 IEEE

Conference_Location

Dearborn, MI, USA

Print_ISBN

0-7803-0453-5

Type

conf

DOI

10.1109/IAS.1991.178051

Filename

178051