DocumentCode
2844423
Title
Comparison of High Voltage Switches in Automotive DC-DC Converter
Author
Gorgerino, A. ; Guerra, A. ; Kinzer, D. ; Marcinkowski, J.
Author_Institution
Int. Rectifier, El Segundo
fYear
2007
fDate
2-5 April 2007
Firstpage
360
Lastpage
367
Abstract
A comparison between trench IGBT, trench MOSFET and superjunction MOSFET is provided in the context of an automotive full bridge DC to DC converter. The converter is analyzed in both hard switching and phase shifted ZVS operation in 3 different voltage ranges (medium, high and extended ranges). After calculating the device loss models, the results are provided as trade-off curves function of normalized cost.
Keywords
automotive components; field effect transistor switches; losses; power semiconductor switches; semiconductor device models; automotive DC-DC converter; device loss models; hard switching; high voltage switches; phase shifted ZVS operation; superjunction MOSFET; trench IGBT; trench MOSFET; Automotive engineering; Bridge circuits; Cost function; DC-DC power converters; Insulated gate bipolar transistors; MOSFET circuits; Medium voltage; Switches; Switching converters; Zero voltage switching; Full bridge converter; IGBT; MOSFET; Modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Conversion Conference - Nagoya, 2007. PCC '07
Conference_Location
Nagoya
Print_ISBN
1-4244-0844-X
Electronic_ISBN
1-4244-0844-X
Type
conf
DOI
10.1109/PCCON.2007.372993
Filename
4239183
Link To Document