DocumentCode
2844899
Title
Low Active Power High Speed Cache Design
Author
Islam, Aminul ; Kafeel, Mohd Ajmal ; Imran, Ale ; Hasan, Mohd
Author_Institution
Dept. of Electron. & Commun. Eng., Birla Inst. of Technol., Ranchi, India
fYear
2011
fDate
19-21 Dec. 2011
Firstpage
254
Lastpage
259
Abstract
The active power is one of the major contributors to the total power consumption in the SRAM cell. It consists mainly of two components -- write power and read power. These power dissipations occur due to charging/discharging of large bit line capacitance. On-chip cache size has become increasingly important for high performance applications, and it now presents more of a limit to microprocessor speed than clock rate. The models and methodologies for the design of SRAM, an integral component of microprocessor cache, have changed with time. Presently, continued scaling is threatened by variability in SRAM performance and function. This work addresses the emerging threat of variability keeping active power consumption and speed of operation in consideration.
Keywords
SRAM chips; cache storage; capacitance; low-power electronics; memory architecture; microprocessor chips; power aware computing; system-on-chip; SRAM cell; SRAM design; SRAM performance variability; active power consumption; bitline capacitance charging-discharging; low active power high speed cache design; microprocessor cache; on-chip cache size; power dissipation; read power; static random access memory; write power; CNTFETs; Computer architecture; Delay; Microprocessors; Noise; Random access memory; Writing; Active power; carbon nanotube field effect transistor (CNFET); chirality vector; read static noise margin (RSNM); static random access memory (SRAM); variability;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic System Design (ISED), 2011 International Symposium on
Conference_Location
Kochi, Kerala
Print_ISBN
978-1-4577-1880-9
Type
conf
DOI
10.1109/ISED.2011.46
Filename
6117360
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