DocumentCode
2844908
Title
Properties and defects study on GaAs based epitaxy materials
Author
Liqi, Cui ; Zhang, Wenjun ; Zhang, Ronggui ; Xiaobai, Li
Author_Institution
13th Inst., Minist. of Electr. Eng., China
fYear
1998
fDate
1998
Firstpage
706
Lastpage
709
Abstract
This paper presents the R&D of GaAs-based heterojunction materials, describes mainly the material properties and the characterization techniques. The microwave device has been fabricated with the as-grown structure material and the testing frequency which has entered into W-band has shown
Keywords
III-V semiconductors; gallium arsenide; high electron mobility transistors; microwave field effect transistors; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; GaAs; GaAs heterojunction material; MODFET; W-band; defects; microwave device; molecular beam epitaxial growth; Epitaxial growth; Frequency; Gallium arsenide; HEMTs; Heterojunctions; MODFETs; Molecular beam epitaxial growth; Ohmic contacts; Research and development; Superlattices;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Millimeter Wave Technology Proceedings, 1998. ICMMT '98. 1998 International Conference on
Conference_Location
Beijing
Print_ISBN
0-7803-4308-5
Type
conf
DOI
10.1109/ICMMT.1998.768387
Filename
768387
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