• DocumentCode
    2844912
  • Title

    High Power Density Converter using SiC-SBD

  • Author

    Omura, I. ; Tsukuda, M. ; Saito, W. ; Domon, T.

  • Author_Institution
    Toshiba Corp. Semicond. Co., Kawasaki
  • fYear
    2007
  • fDate
    2-5 April 2007
  • Firstpage
    575
  • Lastpage
    580
  • Abstract
    This paper reports on the possibility of a high output power density converter by demonstrating a small volume DC-DC down converter using a 600 V superjunction MOSFET (SJ-MOSFET) and silicon carbide Schottky barrier diode (SiC-SBD). The output power density of the demonstrated DC-DC down converter was 50 W/cc, which is the future target of high power density converters.
  • Keywords
    DC-DC power convertors; Schottky diodes; power MOSFET; silicon compounds; DC-DC down converter; SJ-MOSFET; SiC; SiC-SBD; high-power density converter; power converters; silicon carbide Schottky barrier diode; superjunction MOSFET; voltage 600 V; DC-DC power converters; Impedance; MOSFET circuits; Power MOSFET; Power electronics; Power generation; Schottky diodes; Semiconductor diodes; Switching converters; Switching loss; Eoss; Qoss; SiC-SBD; Superjunction-MOSFET;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Conversion Conference - Nagoya, 2007. PCC '07
  • Conference_Location
    Nagoya
  • Print_ISBN
    1-4244-0844-X
  • Electronic_ISBN
    1-4244-0844-X
  • Type

    conf

  • DOI
    10.1109/PCCON.2007.373024
  • Filename
    4239214
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2844912