DocumentCode
2845576
Title
Integration of hybrid silicon DFB laser and electro-absorption modulator using quantum well intermixing
Author
Jain, Siddharth R. ; Sysak, Matthew N. ; Kurczveil, Geza ; Bowers, John
Author_Institution
ECE Dept., Univ. of California Santa Barbara, Santa Barbara, CA, USA
fYear
2010
fDate
19-23 Sept. 2010
Firstpage
1
Lastpage
3
Abstract
We demonstrate an integrated 1310 nm DFB-EAM transponder on the hybrid silicon platform using ion implantation induced quantum well intermixing. CW laser operation up to 60°C is achieved along with 2 GHz modulator bandwidth.
Keywords
distributed feedback lasers; electro-optical modulation; elemental semiconductors; integrated optics; integrated optoelectronics; ion implantation; optical communication equipment; quantum well lasers; silicon; transponders; CW laser operation; Si; bandwidth 2 GHz; electroabsorption modulator; integrated transponder; ion implantation induced quantum well intermixing; silicon DFB laser; wavelength 1310 nm; Bandwidth; Modulation; Optical waveguides; Photonic band gap; Power generation; Silicon; Waveguide lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Optical Communication (ECOC), 2010 36th European Conference and Exhibition on
Conference_Location
Torino
Print_ISBN
978-1-4244-8536-9
Electronic_ISBN
978-1-4244-8534-5
Type
conf
DOI
10.1109/ECOC.2010.5621294
Filename
5621294
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