DocumentCode
2846186
Title
FDTD modeling and computation of M-IDG structures
Author
Yan, Zhang ; Yi, Liu ; Benqing, Gao ; Zhen, Li
Author_Institution
Dept. of Electron. Eng., Beijing Inst. of Technol., China
fYear
1998
fDate
1998
Firstpage
1057
Lastpage
1060
Abstract
The Micro-strip Loaded Inset Dielectric Guide (M-IDG) has been proposed as a microwave and millimeter wave transmission medium. Because of its wide band of working frequencies, analyzing such a structure at every point of interest is rather time-consuming. In this paper, the model of the structure is given. On the basis of this model, the FDTD method is successfully applied and a time-domain solution is obtained, from which the features in the frequency-domain can be derived easily. The results are also compared to the results obtained by a space domain method- the Transverse Resonance Diffraction (TRD) method
Keywords
dielectric waveguides; finite difference time-domain analysis; microstrip lines; waveguide theory; FDTD modeling; M-IDG structures; microstrip loaded inset dielectric guide; Circuits; Computational modeling; Dielectric substrates; Finite difference methods; Frequency domain analysis; Millimeter wave technology; Strips; Surface waves; Time domain analysis; Wideband;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Millimeter Wave Technology Proceedings, 1998. ICMMT '98. 1998 International Conference on
Conference_Location
Beijing
Print_ISBN
0-7803-4308-5
Type
conf
DOI
10.1109/ICMMT.1998.768472
Filename
768472
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