DocumentCode
2846299
Title
Implementing voltage controlled current source in electromagnetic full-wave simulation using the FDTD method
Author
ElMahgoub, Khaled ; Elsherbeni, Atef Z.
Author_Institution
Center of Applied Electromagnetic System Research (CAESR), Department of Electrical Engineering, The University of Mississippi, University, USA
fYear
2012
fDate
17-22 June 2012
Firstpage
1
Lastpage
3
Abstract
The implementation of a voltage controlled current source (VCCS) in full-wave electromagnetic simulation using finite-difference time-domain (FDTD) is introduced. The VCCS is used to model a metal oxide semiconductor field effect transistor (MOSFET) commonly used in microwave circuits. This new approach is verified with several numerical examples including circuits with VCCS and MOSFET. Good agreement is obtained when the results are compared with those based on analytical solution and PSpice.
Keywords
Finite difference methods; Integrated circuit modeling; MOSFET circuits; Mathematical model; Microwave circuits; Time domain analysis; Finite-difference time-domain; MOSFET; dependent sources; voltage controlled current source;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International
Conference_Location
Montreal, QC, Canada
ISSN
0149-645X
Print_ISBN
978-1-4673-1085-7
Electronic_ISBN
0149-645X
Type
conf
DOI
10.1109/MWSYM.2012.6258366
Filename
6258366
Link To Document