Whole chip ESD protection for 2.4 GHz LNA

Author

Jin, H. ; Dong, S.R. ; Miao, M. ; Wu, J. ; Ma, F. ; Luo, J.K. ; Liou, Juin J.

Author_Institution

Dept. of ISEE, Zhejiang Univ., Hangzhou, China

fYear

2011

fDate

17-18 Nov. 2011

Firstpage

1

Lastpage

2

Abstract

Whole chip electrostatic discharge (ESD) protection for 2.4 GHz low noise amplifier (LNA) under 0.18 μm radio frequency (RF) CMOS process is proposed in this paper. Complementary silicon controlled rectifier (SCR) with different layouts for I/O pad ESD protection is evaluated and compared with traditional SCR and diode. Results show that the island complementary SCR (MSCRIsland) structure has highest figure of merit (FOM) and its ESD protection for RF I/O passes 6 kV human body model (HBM), while extra 0.28 dB noise figure (NF) and 178 fF capacitance is introduced into LNA by this ESD protection. LNA power clamp ESD protection is also designed as RC triggered various devices, such as NMOS, SCR and their mixture. Results show that RC trigger NMOS-SCR has high robustness and turn-on speed and its power clamp protection passes 5 kV HBM.

Keywords

CMOS analogue integrated circuits; capacitance; electrostatic discharge; low noise amplifiers; thyristors; FOM; HBM; I/O pad ESD protection; LNA power clamp ESD protection; MSCRIsland structure; RC trigger NMOS-SCR; RC triggered various devices; RF CMOS process; RF I/O; capacitance; capacitance 178 fF; complementary silicon controlled rectifier; figure of merit; frequency 2.4 GHz; human body model; island complementary SCR structure; low noise amplifier; noise figure; noise figure 0.28 dB; power clamp protection; radio frequency CMOS process; turn-on speed; whole chip electrostatic discharge protection; Clamps; Electrostatic discharges; Parasitic capacitance; Radio frequency; Robustness; Thyristors; Electrostatic discharge (ESD); low noise amplifier (LNA); parasitic capacitance;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits (EDSSC), 2011 International Conference of

Conference_Location

Tianjin

ISSN

Pending

Print_ISBN

978-1-4577-1998-1

Electronic_ISBN

Pending

Type

conf

DOI

10.1109/EDSSC.2011.6117571

Filename

6117571