• DocumentCode
    2848934
  • Title

    Line width dependent mobility in high-k a comparative performance study between FUSI and TiN

  • Author

    Pantisano, L. ; Trojman, Lionel ; Andres, E.S. ; Kerner, C. ; Veloso, A. ; Ferain, I. ; Hoffman, T. ; Groeseneken, Guido ; De Gendt, Stefan

  • Author_Institution
    IMEC Leuven, Leuven
  • fYear
    2007
  • fDate
    23-25 April 2007
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    An original detailed methodology has been demonstrated for comparing short channel device performances in HfSiON and two different MG integration schemes. In HfSiON there is substantial room for improvement towards shorter metallurgical gate length and lower series resistance to obtain the desired ION-IOFF performances.
  • Keywords
    CMOS integrated circuits; MOSFET; carrier mobility; hafnium compounds; high-k dielectric thin films; titanium compounds; FUSI; HfSiON; MG integration schemes; TiN; high k; line width dependent mobility; metallurgical gate length; short channel device performances; Chemistry; Dielectric devices; Doping; Electric variables measurement; Etching; High K dielectric materials; High-K gate dielectrics; MOSFET circuits; Robustness; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, Systems and Applications, 2007. VLSI-TSA 2007. International Symposium on
  • Conference_Location
    Hsinchu
  • ISSN
    1524-766X
  • Print_ISBN
    1-4244-0584-X
  • Electronic_ISBN
    1524-766X
  • Type

    conf

  • DOI
    10.1109/VTSA.2007.378909
  • Filename
    4239477
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2848934