DocumentCode
2848995
Title
A new concept for using of Al-sheet as integrated substrate for one or multichip module package
Author
Philippov, Ph ; Arnaudov, Rumen ; Yordanov, N. ; Gospodinova, M.
Author_Institution
Tech. Univ. Sofia, Bulgaria
fYear
1998
fDate
15-17 Apr 1998
Firstpage
112
Lastpage
117
Abstract
In this paper, we present recent studies on the electromigration processes in Ag thin film parallel microstrip lines in MCM-D structures. The basic concept is application of accelerated local drop-tests of water solutions on the surfaces of two adjacent lines under a given voltage potential. These operational conditions are often met in the interconnection line buses placed in the top assembly level of multilayered hybrid structures. The subject of the investigations are MCM-Ds developed on an Al-sheet carrier with internal conducting and isolating layers, produced through unique selective electrochemical anodization of Al and Ta. This process technology also enables the creation of embedded R and C passive components based on TaOxN1-x and Ta2O5 (or Al 2O3) respectively. We propose electrochemical deposition of Ag/Sb alloys on the surface of Al interconnection lines and contact pads to ease the bondability and solderability in chip mounting procedures. The artificially created silver migrated defects and partial shorts are investigated through the high frequency method of coupled transmission lines in order to eliminate the errors and insufficient validity of DC direct measurements
Keywords
aluminium; anodisation; electrochemistry; electromigration; integrated circuit interconnections; integrated circuit metallisation; integrated circuit packaging; integrated circuit testing; lead bonding; life testing; microstrip lines; multichip modules; soldering; Ag; Ag thin film parallel microstrip lines; Ag-Sb alloy electrochemical deposition; AgSb-Al; Al; Al contact pads; Al interconnection lines; Al-sheet carrier; Al-sheet integrated substrate; Al2O3; Al2O3 passive components; DC direct measurements; HF coupled transmission lines method; MCM-D structures; MCM-Ds; Ta2O5; Ta2O5 passive components; TaON; TaON passive components; accelerated local water solution drop-tests; artificially created partial shorts; artificially created silver migrated defects; bondability; chip mounting procedures; electromigration processes; embedded C passive components; embedded R passive components; interconnection line buses; internal conducting layers; internal isolating layers; measurement error elimination; multichip module package; multilayered hybrid structure assembly; operational conditions; process technology; selective Al electrochemical anodization; selective Ta electrochemical anodization; single chip module package; solderability; Acceleration; Aluminum alloys; Assembly; Electromigration; Isolation technology; Microstrip; Substrates; Tin alloys; Transistors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Multichip Modules and High Density Packaging, 1998. Proceedings. 1998 International Conference on
Conference_Location
Denver, CO
Print_ISBN
0-7803-4850-8
Type
conf
DOI
10.1109/ICMCM.1998.670764
Filename
670764
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