• DocumentCode
    2849040
  • Title

    Improved NBTI in SiN-Capped PMOSFETs with Ultra-thin HfO2 Buffer

  • Author

    Lu, Ching-Sen ; Lin, Horng-Chih ; Chen, Ying-Hung ; Huang, Tiao-Yuan

  • Author_Institution
    Nat. Chiao Tung Univ., Hsinchu
  • fYear
    2007
  • fDate
    23-25 April 2007
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Although a compressive SiN capping could effectively boost the drive current of PMOS devices, it may concomitantly worsen the NBTI characteristics owing to the high hydrogen content in the SiN layer which might diffuse to the channel region during processing. To address this issue, inserting a thin 3 nm HfO2 buffer layer between the gate and SiN capping is proposed and demonstrated to improve NBTI reliability without sacrificing the performance enhancement by SiN capping.
  • Keywords
    MOSFET; buffer layers; hafnium compounds; hydrogen; integrated circuit reliability; silicon compounds; thermal stability; HfO2; NBTI reliability; SiN; SiN-capped PMOSFET; negative bias temperature instability; size 3 nm; ultrathin HfO2 buffer layer; Buffer layers; Hafnium oxide; Hydrogen; MOS devices; MOSFETs; Niobium compounds; Silicon compounds; Stress; Titanium compounds; Uniaxial strain;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, Systems and Applications, 2007. VLSI-TSA 2007. International Symposium on
  • Conference_Location
    Hsinchu
  • ISSN
    1524-766X
  • Print_ISBN
    1-4244-0584-X
  • Electronic_ISBN
    1524-766X
  • Type

    conf

  • DOI
    10.1109/VTSA.2007.378917
  • Filename
    4239485
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2849040