Silicon radiation detector development at VTT

Author

Kalliopuska, J.J. ; Eränen, S. ; Virolainen, T. ; Kämäräinen, V. ; Ji, F. ; Garcia, F. ; Orava, R. ; van Remortel, N. ; Santala, M.

Author_Institution

VTT Microelectron., Espoo

Volume

2

fYear

2007

fDate

Oct. 26 2007-Nov. 3 2007

Firstpage

1494

Lastpage

1497

Abstract

VTT has two decades experience on the manufacturing and design of the silicon radiation detectors. The activities cover a range of industrial devices as well as the devices for the physics experiments. The paper gives an overview on the new solid state detector development activity at VTT that comprise advanced X-ray photo diodes, through wafer interconnections for the photo diode arrays, thin silicon strip detectors, active-edge strip and pixel detectors with different biasing schemes, and full 3D 1 mm thick active edge silicon detectors.

Keywords

nuclear electronics; photodiodes; radiation detection; readout electronics; silicon radiation detectors; VTT; X-ray photodiodes; industrial devices; pixel detectors; radiation detection; read-out circuit; silicon radiation detectors design; solid state detector; thin silicon strip detectors; wafer interconnections; Diodes; Manufacturing industries; Physics; Radiation detectors; Silicon on insulator technology; Silicon radiation detectors; Solid state circuits; Space technology; X-ray detection; X-ray detectors;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium Conference Record, 2007. NSS '07. IEEE

Conference_Location

Honolulu, HI

ISSN

1095-7863

Print_ISBN

978-1-4244-0922-8

Electronic_ISBN

1095-7863

Type

conf

DOI

10.1109/NSSMIC.2007.4437282

Filename

4437282