• DocumentCode
    2849104
  • Title

    Evaluation of S/D Resistance (RSD) and Strain Scalability by Mechanical-bending Approach

  • Author

    Wu, Kehuey ; Chang, Chih-Sheng ; Lin, Hong-Nien ; Lee, Wen-Chin

  • Author_Institution
    Taiwan Semicond. Manuf. Co. Ltd., Hsinchu
  • fYear
    2007
  • fDate
    23-25 April 2007
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    A simple yet effective approach for the extraction of source/drain (S/D) series resistance RSD using mechanical four-point bending is presented. This new approach can be used to extract the RSD of each device disregarding its channel length. According to the results, the benefits of RSD reduction become more prominent in shorter channel devices. Further analysis reveals that the strain-induced enhancement is suppressed in shorter channel devices than longer channel ones due to higher channel doping necessitated by short-channel control.
  • Keywords
    CMOS integrated circuits; bending; doping; scaling circuits; S/D resistance; channel doping; channel length; mechanical-bending approach; source/drain series resistance; strain scalability; CMOS technology; Capacitive sensors; Data mining; Doping; Driver circuits; Equivalent circuits; Scalability; Semiconductor device manufacture; Strain control; Stress;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, Systems and Applications, 2007. VLSI-TSA 2007. International Symposium on
  • Conference_Location
    Hsinchu
  • ISSN
    1524-766X
  • Print_ISBN
    1-4244-0584-X
  • Electronic_ISBN
    1524-766X
  • Type

    conf

  • DOI
    10.1109/VTSA.2007.378920
  • Filename
    4239488
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2849104