The effect of bandgap engineering on IC-VBE fly-back characteristic of power SiGe heterojunction bipolar transistor

Author

Liang, Chen ; Wan-rong, Zhang ; Dong-yue, Jin ; Chun-bao, Ding ; Yu-jie, Zhang ; Zhi-yi, Lu

Author_Institution

Coll. of Electron. Inf. & Control Eng., Beijing Univ. of Technol., Beijing, China

fYear

2011

fDate

17-18 Nov. 2011

Firstpage

1

Lastpage

2

Abstract

The effect of bandgap engineering on I_C-V_BE flyback characteristic of power SiGe heterojunction bipolar transistor is studied through theoretical analysis, computer simulations, and experimental measurements. It is found that because of the existence of Ge composition, SiGe Heterojunction Bipolar Transistors have better thermal stability compared with homojunction bipolar transistors under the same operating condition which will be beneficial to decrease the emitter ballast resistance of HBT and improve the performance of transistor. And the greater Ge composition is, the more stable the HBT is.

Keywords

Ge-Si alloys; energy gap; heterojunction bipolar transistors; power bipolar transistors; semiconductor device models; semiconductor materials; thermal stability; I_C-V_BE fly-back characteristic; SiGe; bandgap engineering; emitter ballast resistance; homojunction bipolar transistors; power heterojunction bipolar transistor; thermal stability; Heterojunction bipolar transistors; Microwave devices; Microwave integrated circuits; Silicon germanium; Temperature dependence; Thermal stability; Bandgap Engineering; SiGe HBTs; fly-back characteristic;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits (EDSSC), 2011 International Conference of

Conference_Location

Tianjin

ISSN

Pending

Print_ISBN

978-1-4577-1998-1

Electronic_ISBN

Pending

Type

conf

DOI

10.1109/EDSSC.2011.6117589

Filename

6117589