Positive resists for electron-beam and X-ray lithography

Author

Bulgakova, S.A. ; Mazanova, L.M. ; Semchikov, Yu.D. ; Lopatin, A.Y. ; Luchin, V.I. ; Salashchenko, N.N.

Author_Institution

Res. Inst. of Chem., Nizhny Novgorod State Univ., Russia

fYear

1998

fDate

1998

Firstpage

81

Lastpage

82

Abstract

For the first time the method of chemical modification of polymethylmethacrylate (PMMA) as a positive radiation resist which allows 2-3 fold increase of PMMA sensitivity to radiation without the lost of its high resolution has been proposed. Organohydridedisilanes (DS) have been used as modificators of the polymer. These modificators include Si-Si bonds weaker than C-C bonds which make a contribution to the increase of efficiency of the polymer chain scissions upon irradiation. Lines of 0.14 μm width were produced in the 0.41 μm thick PMMA films by electron-beam lithography. Based on the PMMA copolymers modified by DS two resists of 5-8 times higher sensitivity than PMMA and similar contrast have been developed

Keywords

X-ray lithography; electron resists; photoresists; polymer blends; polymer films; polymerisation; 0.14 mum; 0.4 mum; PMMA; PMMA copolymers; PMMA films; X-ray lithography; chemical modification; contrast; electron-beam lithography; linewidth; organohydridedisilanes; polymer chain scissions; polymethylmethacrylate; positive radiation resist; radiation sensitivity; Chemical technology; Chemistry; Electron beams; Microelectronics; Microstructure; Polymer films; Resists; Silicon compounds; Testing; X-ray lithography;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Instrument Engineering Proceedings, 1998. APEIE-98. Volume 1. 4th International Conference on Actual Problems of

Conference_Location

Novosibirsk

Print_ISBN

0-7803-4938-5

Type

conf

DOI

10.1109/APEIE.1998.768915

Filename

768915