• DocumentCode
    2849166
  • Title

    Solutions to catastrophic yield problems in MCM-D interconnection production

  • Author

    Hawley, Julia ; Vo, V.

  • Author_Institution
    Raytheon Syst. Co., Dallas, TX, USA
  • fYear
    1998
  • fDate
    15-17 Apr 1998
  • Firstpage
    118
  • Lastpage
    123
  • Abstract
    Yield issues are a constant concern during production of an MCM circuit with 1.0 mil lines, 3 aluminum layers separated by polyimide insulator, 250 traces per square inch, and a top layer of aluminum and gold bond pads. The complexity of the circuit creates numerous defect opportunities, but two failure modes are catastrophic. These include megohm shorts and selective gold/aluminum layer defects such as blistering gold, voids and discoloration of aluminum bond pads. Designed experiments are performed to elucidate the root causes of the problems and determine and implement corrective actions. Megohm short testing includes process flow evaluations (lift-off vs. etchback), metal wet etches, and TiW oxidation. Results indicate that megohm shorts are eliminated by changing from a lift-off to an etchback process. Experimental parameters for selective gold/aluminum layer defects include metal deposition, TiW etch, resist strip, and polyimide etch. Significant interactions are observed between the parameters studied and test part analysis shows a gold/aluminum displacement reaction on the aluminum pads. The design of experiments, results, and corrective actions are presented. Tests showed that the aluminum deposition was the root cause of the problem. Discontinuation of use of the metal deposition machine resulted in increased yields
  • Keywords
    design of experiments; dielectric thin films; etching; failure analysis; integrated circuit interconnections; integrated circuit packaging; integrated circuit reliability; integrated circuit testing; integrated circuit yield; lead bonding; multichip modules; oxidation; polymer films; surface chemistry; voids (solid); 1 mil; Al; Al-Au; MCM circuit; MCM-D interconnection production; TiW; TiW etch; TiW oxidation; aluminum bond pad discoloration; aluminum deposition; aluminum layers; aluminum pads; blistering gold; catastrophic failure modes; catastrophic yield problems; circuit complexity; defect opportunities; design of experiments; designed experiments; etchback process; gold/aluminum displacement reaction; lift-off process; megohm shorts; metal deposition; metal deposition machine; metal wet etches; polyimide etch; polyimide insulator; process flow evaluation; resist strip; selective gold/aluminum layer defects; short testing; top layer aluminum/gold bond pads; trace density; voids; yield issues; Aluminum; Bonding; Gold; Insulation; Integrated circuit interconnections; Oxidation; Polyimides; Production; Testing; Wet etching;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Multichip Modules and High Density Packaging, 1998. Proceedings. 1998 International Conference on
  • Conference_Location
    Denver, CO
  • Print_ISBN
    0-7803-4850-8
  • Type

    conf

  • DOI
    10.1109/ICMCM.1998.670765
  • Filename
    670765