DocumentCode
2849483
Title
High Mobility Channel Materials for Future CMOS
Author
Saraswat, Krishna C.
Author_Institution
Stanford Univ., Stanford
fYear
2007
fDate
23-25 April 2007
Firstpage
1
Lastpage
4
Abstract
Channel materials with high mobility will be needed for future technology nodes . In this work we assess the performance of Si, Ge, and III-V materials like GaAs, InAs and InSb which may perform better than even very highly strained-Si.
Keywords
III-V semiconductors; MOSFET; carrier mobility; elemental semiconductors; gallium arsenide; germanium; indium compounds; silicon; CMOS; GaAs; Ge; InAs; InSb; MOSFET; Si; high-mobility channel materials; Annealing; CMOS technology; Gallium arsenide; Hydrogen; Lattices; MOSFETs; Passivation; Rough surfaces; Surface morphology; Surface roughness;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, Systems and Applications, 2007. VLSI-TSA 2007. International Symposium on
Conference_Location
Hsinchu
ISSN
1524-766X
Print_ISBN
1-4244-0584-X
Electronic_ISBN
1524-766X
Type
conf
DOI
10.1109/VTSA.2007.378944
Filename
4239512
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