A novel 1T2UMTJ toggle MRAM with high read/write bandwidth interface

Author

Wang, M.C. ; Tsai, J.R. ; Hung, C.C. ; Chen, Y.S. ; Chang, C.P. ; Lin, C.S. ; Wang, C.C. ; Su, K.L. ; Lee, Y.J. ; Wang, D.Y. ; Shen, K.H. ; Tsai, M.J. ; Kao, M.J.

Author_Institution

ITRI, Hsinchu

fYear

2007

fDate

23-25 April 2007

Firstpage

1

Lastpage

2

Abstract

A novel one-transistor-and-two-uneven-magnetic tunneling junctions (1T2UMTJ) cell with toggle switching mode is proposed to increase the packing density and to secure the writing selectivity. Besides, a four-state sense amplifier is proposed to reduce the read access time to less than 25 ns for two accessing data in one cycle. With adequate I/O stages, the 1T2UMTJ toggle MRAM architecture has a double word length or alternatively has a high read/write bandwidth. The two-bit data can be read from or written into a selected memory cell of 1T2UMTJ toggle MRAM within one clock cycle, therefore, demonstrating the promising property of high bandwidth processing capability.

Keywords

magnetic storage; magnetic tunnelling; random-access storage; 1T2UMTJ toggle MRAM; clock cycle; four-state sense amplifier; high bandwidth processing capability; high read-write bandwidth interface; one-transistor-and-two-uneven-magnetic tunneling junction cell; toggle switching mode; Bandwidth; Clocks; Laboratories; Magnetic separation; Magnetic tunneling; Random access memory; Read-write memory; Scalability; Timing; Writing;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems and Applications, 2007. VLSI-TSA 2007. International Symposium on

Conference_Location

Hsinchu

ISSN

1524-766X

Print_ISBN

1-4244-0584-X

Electronic_ISBN

1524-766X

Type

conf

DOI

10.1109/VTSA.2007.378949

Filename

4239517