DocumentCode
2849584
Title
Proposal of 3-Dimensional Independent Triple-Gate MOS Transistor with Dynamic Current Control
Author
Okuyama, Kiyoshi ; Yoshikawa, Koji ; Sunami, Hideo
Author_Institution
Hiroshima Univ., Hiroshima
fYear
2007
fDate
23-25 April 2007
Firstpage
1
Lastpage
2
Abstract
A three-dimensional nMOSFET with independent parallel triple gates on an SOI beam is successfully developed. Since this FET can provide independent biasing to each gate, both subthreshold behavior and drivability can be flexibly controlled in response to performance requirement. Furthermore, its self-aligned structure provides planar area shrinkage to certain extent.
Keywords
MOSFET; silicon-on-insulator; 3-dimensional independent triple-gate MOS transistor; SOI beam; dynamic current control; nMOSFET; parallel triple gates; Current control; Electric variables control; Electrodes; Etching; FETs; Lead compounds; MOSFET circuits; Oxidation; Proposals; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, Systems and Applications, 2007. VLSI-TSA 2007. International Symposium on
Conference_Location
Hsinchu
ISSN
1524-766X
Print_ISBN
1-4244-0584-X
Electronic_ISBN
1524-766X
Type
conf
DOI
10.1109/VTSA.2007.378951
Filename
4239519
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