Effect of ICP etching on InP-based multiple quantum wells microring lasers

Author

Sheng, Xie ; Zhiming, Chen ; Xin, Yu ; Shilin, Zhang ; Xianjie, Li ; Yan, Chen ; Weilian, Guo ; Lifang, Qi ; Luhong, Mao ; Jinlong, Yu

Author_Institution

Sch. of Electron. Inf. Eng., Tianjin Univ., Tianjin, China

fYear

2011

fDate

17-18 Nov. 2011

Firstpage

1

Lastpage

2

Abstract

Dry etching of InP-based epitaxial structure was performed by using inductively coupled plasma (ICP) system with different chemistries. The surface topographies shown that the waveguide profiles etched using the Cl₂/CH₄/Ar recipe have better surface and sidewall quality than that of the Cl₂/BCl₃ chemistry. To verify the practical influence of ICP etching, InP/AlGaInAs multiple quantum wells microring lasers were fabricated, and the electrical and optical properties were compared. The experimental results revealed that the Cl₂/CH₄/Ar recipe is preferable to the fabrication of InP-based optoelectronic devices in our experimental system.

Keywords

III-V semiconductors; aluminium compounds; carbon compounds; gallium compounds; indium compounds; quantum well lasers; ring lasers; sputter etching; surface topography; Cl₂-BCl₃; Cl₂-CH₄-Ar; InP-AlGaInAs; dry etching; epitaxial structure; inductively coupled plasma etching; multiple quantum wells microring lasers; optoelectronic devices; surface topography; waveguide profiles; Argon; Chemistry; Etching; Integrated optics; Optical device fabrication; Optical surface waves; Optical waveguides; Dry etching; indium phosphide; inductively coupled plasma; microring laser; waveguide;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits (EDSSC), 2011 International Conference of

Conference_Location

Tianjin

ISSN

Pending

Print_ISBN

978-1-4577-1998-1

Electronic_ISBN

Pending

Type

conf

DOI

10.1109/EDSSC.2011.6117681

Filename

6117681