A 100MHz — 2GHz wireless receiver in 40-nm CMOS for software-defined radio

Author

Peng, Y. ; Liu, Y. ; Yang, F. ; Zhang, X.L. ; Yu, X.P. ; Lu, Z.H. ; Lim, W.M. ; Hu, C.H.

Author_Institution

State Key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol., Chengdu, China

fYear

2011

fDate

17-18 Nov. 2011

Firstpage

1

Lastpage

2

Abstract

Software-defined radio (SDR), one of solutions to realize multi-mode terminal for mobile communication standards, has attracted intensive studies. A wideband wireless receiver is designed in a 40-nm CMOS process for SDR, which can cover the frequency range from 100MHz to 2GHz. The wideband RF front-end includes a low noise amplifier (LNA), a mixer, intermediate frequency amplifier (IF AMP) and a variable gain amplifier (VGA). The focal point of the design lies in the wideband LNA. The wideband inductorless LNA with 1.1-V supply is a two-stage amplifier that can operates from 100MHz to 2GHz. The noise figure (NF) of the LNA is 2.2-2.4 dB while it can achieve gains of 24-12 dB and 0- -12 dB when working under the active mode and passive mode, respectively. The whole system provides a NF of 3.2-3.5 dB with 5.02mw power consumption.

Keywords

CMOS analogue integrated circuits; UHF amplifiers; UHF integrated circuits; low noise amplifiers; mobile radio; radio receivers; software radio; CMOS process; IF AMP; SDR; VGA; focal point; frequency 100 MHz to 2 GHz; gain 0 dB to 12 dB; gain 24 dB to 12 dB; intermediate frequency amplifier; low noise amplifier; mobile communication standards; noise figure 2.2 dB to 2.4 dB; noise figure 3.2 dB to 3.5 dB; power 5.02 mW; size 40 nm; software-defined radio; two-stage amplifier; variable gain amplifier; voltage 1.1 V; wideband RF front-end; wideband inductorless LNA; wideband wireless receiver; CMOS integrated circuits; Gain; Mixers; Noise measurement; Radio frequency; Receivers; Wideband; 40nm CMOS; Front-end; Low Noise Amplifier; Receiver; Software-Defined Radio; Wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits (EDSSC), 2011 International Conference of

Conference_Location

Tianjin

ISSN

Pending

Print_ISBN

978-1-4577-1998-1

Electronic_ISBN

Pending

Type

conf

DOI

10.1109/EDSSC.2011.6117693

Filename

6117693